? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c70a i c90 t c = 90 c30a i cm t c = 25 c, 1 ms 140 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 i cm = 90 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 22 non repetitive
t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min leads-to housing 2500 v~ maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g v ces = 1200 v i c25 = 70 a v ce(sat) = 3.6 v t fi(typ) = 160 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 1200 v v ge(th) i c =
v ce = v ge 36v i ces v ce = 0.8 ? v ces t j = 25 c1ma v ge = 0 v t j = 150 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = v ge = 15 v 3.6 v 98741 (08/00) igbt with diode isoplus 247 tm (electrically isolated backside) short circuit soa capability ixsr 35n120bd1 advanced technical information
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( isoplus 247 tm g c isolated backside* e 153432 e #' 11
' * patent pending device must be heatsunk for high temperature measurements to avoid thermal runaway. ixys reserves the right to change limits, test conditions and dimensions
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
ixsr 35n120bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = ; v ce = 10 v, 16 23 s pulse test, t 300 s, duty cycle 2 % c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 pf c rss 75 pf q g 120 nc q ge i c = v ge = 15 v, v ce = 0.5 v ces 33 nc q gc 49 nc t d(on) 36 ns t ri 27 ns t d(off) 160 300 ns t fi 180 300 ns e off 59mj t d(on) 38 ns t ri 29 ns e on 6mj t d(off) 240 ns t fi 340 ns e off 9mj r thjc 0.5 k/w r thck 0.15 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = v ge = 0 v, 2.75 v pulse test, t 300 s, duty cycle d 2 % 1.85 i rm i f = v ge = 0 v, -di f /dt = 100 a/ s 7 14.3 a t rr v r = 100 v i f = 1 a; -di/dt = 200 a/ s; v r = 30 v 40 n s r thjc 0.83 k/w inductive load, t j = 25 c i c = v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g
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